Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-09-20
1996-05-21
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257337, 257368, 257379, 257539, H01L 2702, H01L 2348
Patent
active
055192416
ABSTRACT:
In a bipolar power component, for example an IGBT, having an emitter structure and a drift zone of the opposite conductivity type, the emitter structure is provided with a first contact and the drift zone is provided with a second contact. The first contact and the second contact are connected to a drivable resistor circuit such that, dependent on a control signal at the resistor circuit, the current through the power component optionally flows via the first contact and/or via the second contact to a third contact of the resistor circuit.
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Oppermann Klaus-Guenter
Stoisiek Michael
Prenty Mark V.
Siemens Aktiengesellschaft
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