Circuit structure for connecting bonding pad and ESD...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S360000, C257S365000, C257S382000, C257S383000, C257S395000

Reexamination Certificate

active

06927457

ABSTRACT:
A circuit structure for connecting a bonding pad with an electrostatic discharge protection circuit. The circuit structure includes a plurality of conductive layers, a first plurality of first vias, a first conductive line, a plurality of second conductive lines and a plurality of second vias. The conductive layers are parallel layers each at a different height level between the bonding pad and a substrate. The first vias connect the bonding pad electrically with a neighboring conductive layer as well as each neighboring conductive layer. The first conductive line connects electrically with the conductive layer nearest the substrate and the drain terminal of an ESD protection circuit. The second conductive lines are parallel lines each at a different height level between the first conductive line and the bonding pad. Each second conductive line connects electrically with the conductive layer at a corresponding height level. The second vias connect electrically with the first conductive line and the second conductive line adjacent to the first conductive line as well as each neighboring second conductive line.

REFERENCES:
patent: 6037636 (2000-03-01), Crippen
patent: 6153913 (2000-11-01), Hsu et al.
patent: 6376881 (2002-04-01), Nagaya
patent: 6462384 (2002-10-01), Kwon

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