Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-09-05
2010-10-19
Rossoshek, Helen (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C430S005000, C430S296000
Reexamination Certificate
active
07818709
ABSTRACT:
Circuit-pattern-data correction method and semiconductor-device manufacturing method which prevent excessive correction from being made when model-based proximity-effect correction (OPC) is applied to a corrected circuit pattern, the excessive correction being caused by a step (difference in level) close to a circuit-pattern corner in the corrected circuit pattern, and the step being produced when rule-base OPC is applied. The rule-based OPC is applied to input design data in step S1; a step close to a circuit-pattern corner, produced by the rule-based OPC is detected in step S2; the step is removed in step S3; and the model-based OPC is applied and exposure data is generated in step S4.
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Chijimatsu Tatsuo
Sagisaka Atsushi
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Rossoshek Helen
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