Circuit-pattern-data correction method and...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000, C430S005000, C430S296000

Reexamination Certificate

active

07818709

ABSTRACT:
Circuit-pattern-data correction method and semiconductor-device manufacturing method which prevent excessive correction from being made when model-based proximity-effect correction (OPC) is applied to a corrected circuit pattern, the excessive correction being caused by a step (difference in level) close to a circuit-pattern corner in the corrected circuit pattern, and the step being produced when rule-base OPC is applied. The rule-based OPC is applied to input design data in step S1; a step close to a circuit-pattern corner, produced by the rule-based OPC is detected in step S2; the step is removed in step S3; and the model-based OPC is applied and exposure data is generated in step S4.

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Shi et al “The selection and creation of the rules in rules-based optical proximity correction”; Oct. 23-25, 2001; ASIC, 2001Proceedings. 4th International Conference on; pp. 50-53.

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