Circuit including DRAM and voltage regulator, and method of incr

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

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Details

365222, 365226, G11C 11403

Patent

active

055965342

ABSTRACT:
An integrated circuit comprising a reference voltage generator having an output providing a reference voltage; a selectively engageable filter having an input connected to the output of the reference voltage generator, and having an output; a voltage regulator having an input connected to the output of the filter, and having an output; a dynamic random access memory receiving power from the output of the voltage regulator, the dynamic random access memory having memory cells that are accessed or refreshed in response to a first signal; and a timing circuit which engages the filter in response to presence of a first signal, and causes the filter to filter the reference voltage. A method of increasing the speed of operation of an integrated circuit including a dynamic random access memory having memory cells which are individually accessed in response to a signal, including a reference voltage generator having an output, and including a voltage regulator which accepts the output of the reference voltage generator and supplies voltage to the dynamic random access memory, the method comprising filtering the output of the reference voltage generator in response to the signal.

REFERENCES:
patent: 4961167 (1990-10-01), Kumanoya et al.
patent: 5163025 (1992-11-01), Chamberlain
"A New On-Chip Voltage Regulator for High Density CMOS DRAMs" by R. S. Mao et al., 1992 Symposium on VLSI Circuits Digest of Technical Papers, IEEE
1992.

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