Circuit including a combined insulated gate bipolar transistor/M

Details Circuit including a combined insulated gate bipolar transistor/M Circuit including a combined insulated gate bipolar transistor/M

1988-10-07

1990-02-13

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307446, 307570, 357 43, 357 238, 357 38, H01C 2702

Patent

active

049011278

ABSTRACT:
An IGBT and FET are integrated in a common semiconductor body and share common source/emitter, base and drift regions and an insulated gate electrode. The ON-resistance and turn-off time of this device can be controlled by connecting the drain and collector electrodes to one main terminal for the device with a resistor between either the drain region/drift region interface or the collector junction and the main terminal of the device.

REFERENCES:
patent: 4344081 (1982-08-01), Pao
patent: 4680604 (1987-07-01), Nakagawa
Chow, T., "A New Hybrid VDMOS-LIGBT Transistor", IEEE Electron Device Letters, vol. 9, No. 9, Sep. 1988, pp. 473-475.
Liu, D. et al., "A Novel Trench-Injector Power Device with Low ON Resistance and High Switching Speed", IEEE Electron Device Letters, vol. 9, No. 7, Jul. 1988, pp. 321-323.
Fossum, J. G. et al., "An Insightful Analysis of the Hybrid Insulated-Gate Bipolar Transistor", IEEE Transactions on Electron Devices, vol. 35, No. 9, Sep. 1988, pp. 1560-1562.

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