Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-05-03
2005-05-03
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S529000
Reexamination Certificate
active
06888216
ABSTRACT:
The present invention discloses a circuit having a make-link type fuse. The circuit comprising a first make-link type fuse connected between a gate of a transistor and a first supply voltage.
REFERENCES:
patent: 4665295 (1987-05-01), McDavid
patent: 5587598 (1996-12-01), Hatanaka
patent: 6141281 (2000-10-01), Mobley et al.
patent: 20020027248 (2002-03-01), Aipperspach et al.
patent: 20020044006 (2002-04-01), Jung et al.
patent: 20020080004 (2002-06-01), Kimura et al.
Lee Won-Seok
Moon Young-Kug
Ryu Dong-Ryul
Marger & Johnson & McCollom, P.C.
Ngo Ngan V.
Samsung Electronics Co,. Ltd.
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