Circuit for verifying the write speed of SRAM cells

Details Circuit for verifying the write speed of SRAM cells Circuit for verifying the write speed of SRAM cells

2006-07-25

2006-07-25

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S154000, C365S189080, C365S189110, C365S233100, C365S239000, C331S057000

Reexamination Certificate

active

07082067

ABSTRACT:
A circuit for measuring the performance of a memory cell. The circuit includes a ring oscillator, which includes a plurality of memory cells. The performance of the memory cell can be determined from an oscillation frequency of the ring oscillator. The circuit accurately verifies the performance of the memory cell without modifying the memory cell. This avoids altering the transient AC characteristics of the memory cell when predicting its performance.

REFERENCES:
patent: 6255701 (2001-07-01), Shimada
patent: 6334120 (2001-12-01), Shibata et al.
patent: 6373290 (2002-04-01), Forbes
patent: 6452459 (2002-09-01), Chan et al.
patent: 6493851 (2002-12-01), Bach et al.
patent: 6774734 (2004-08-01), Christensen et al.
patent: 6867613 (2005-03-01), Bienek
patent: 2004/0061561 (2004-04-01), Monzel et al.
patent: 2004/0091096 (2004-05-01), Chen et al.
patent: 62140300 (1987-06-01), None
patent: 09294055 (1997-11-01), None

Affiliated with

Also associated with

Rating

Circuit for verifying the write speed of SRAM cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuit for verifying the write speed of SRAM cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit for verifying the write speed of SRAM cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3614354