Circuit for sensing the state of matrix cells in MOS EPROM memor

Details Circuit for sensing the state of matrix cells in MOS EPROM memor Circuit for sensing the state of matrix cells in MOS EPROM memor

1989-01-18

1990-08-14

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Testing

365207, 36518909, 371 111, G11L 1300

Patent

active

049493078

ABSTRACT:
The matrix cells and a virgin reference cell have their respective drains connected to a supply voltage through respective identical loads; a selection voltage is applied to the gate of a chosen matrix cell and to the gate of the virgin reference cell and the respective currents flowing across the two cells are compared in a differential amplifier. According to the invention, a generator is connected to the node between the drain of the reference cell and the voltage supply, and generates an offset current which is substantially constant as the supply voltage varies.

REFERENCES:
patent: 4802166 (1989-01-01), Casagrande et al.
patent: 4807188 (1989-02-01), Casagrande

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