Circuit for sensing memory having a plurality of threshold volta

Details Circuit for sensing memory having a plurality of threshold volta Circuit for sensing memory having a plurality of threshold volta

1998-07-30

1999-08-24

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365184, 36518907, 36523006, 327 56, 327 74, 327 77, G11C 1300

Patent

active

059432721

ABSTRACT:
The circuit for sensing a memory having a plurality of threshold voltages is directed to using a technique for maintaining a characteristic curve of a voltages-matched circuit and combining a characteristic curve in which the voltage is moved by a minimum value which is one half of the reference voltage with a conventional characteristic curve, so that it is possible to reduce in half the minimum distance between the voltage distributions for thereby optimizing the above distance by controlling the power voltage irrespective of the characteristic of a device.

REFERENCES:
patent: 4964079 (1990-10-01), Devin
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5841704 (1998-11-01), Notom
patent: 5847597 (1998-12-01), Ooishs et al.

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