Circuit for selecting a power supply voltage and...

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Reexamination Certificate

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C365S201000

Reexamination Certificate

active

07315483

ABSTRACT:
A semiconductor memory device capable of reducing the number of pads is provided. The semiconductor memory device may include a pad, a power supply voltage generating circuit and a voltage selection circuit. The power supply voltage generating circuit may generate one or more power supply voltages, which may be used in a semiconductor device. The voltage selection circuit may select one of the power supply voltages in response to test mode signals to provide the selected power supply voltage to the pad. The voltage selection circuit may include a voltage level regulating circuit to convert voltage levels of the test mode signals to generate gate control signals and metal-oxide semiconductor (MOS) transistors connected to the power supply voltages, respectively. The MOS transistors may be selectively turned on in response to the gate control signals to provide the selected power supply voltage to the pad.

REFERENCES:
patent: 6845048 (2005-01-01), Alexander et al.
patent: 6999356 (2006-02-01), Kozuka et al.
patent: 7138817 (2006-11-01), Suzuki et al.
patent: 2007/0085559 (2007-04-01), Kim et al.
patent: 10-2001-0004200 (2001-01-01), None
patent: 1020010105442 (2001-11-01), None
patent: 1020020006303 (2002-01-01), None
patent: 10-2004-0110317 (2004-12-01), None
patent: 1020050000010 (2005-01-01), None
Office Action in corresponding Korean Application No. 2005-74342 dated Nov. 18, 2006.

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