Circuit for programming a memory element

Details Circuit for programming a memory element Circuit for programming a memory element

2007-06-21

2009-08-11

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S185180, C365S185190

Reexamination Certificate

active

07571901

ABSTRACT:
An integrated circuit includes a memory element and a circuit. The circuit is configured to program the memory element by applying one or more pulses to the memory element until a sensed resistance of the memory element is within a range of a desired resistance. The one or more pulses have a parameter value that is modified for each subsequent pulse based on the parameter value for an immediately preceding pulse and on a difference between the sensed resistance of the memory element and the desired resistance.

REFERENCES:
patent: 6075719 (2000-06-01), Lowrey et al.
patent: 6687153 (2004-02-01), Lowrey
patent: 6759267 (2004-07-01), Chen
patent: 7031181 (2006-04-01), Happ
patent: 7099180 (2006-08-01), Dodge et al.
patent: 7110286 (2006-09-01), Choi et al.
patent: 7113424 (2006-09-01), Happ et al.
patent: 7154774 (2006-12-01), Bedeschi et al.
patent: 7180771 (2007-02-01), Cho et al.
patent: 2004/0246804 (2004-12-01), Cho et al.
patent: 2004/0246808 (2004-12-01), Cho et al.
patent: 2005/0117387 (2005-06-01), Hwang et al.
patent: 2005/0117388 (2005-06-01), Cho et al.
patent: 2005/0195633 (2005-09-01), Choi et al.
patent: 2006/0126380 (2006-06-01), Osada et al.
patent: 2006/0220071 (2006-10-01), Kang et al.
patent: 2007/0077699 (2007-04-01), Gordon et al.
“Intel StrataFlash Memory Technology Overview”, Greg Atwood, et al., Intel Technology Journal Q4, 1997 (8 pgs.).
“Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications”, Tyler A. Lowrey, et al., Ovonyx, Inc., 2004 (7 pgs.).
“OUM, Ovonic Unified Memory”, ECD Ovonics, Research Report, http://www.ovonics.com/PDFs/Elec—Memory—Research—Report/OUM.pdf, 1999 (80 pgs.).
“Enhanced Write Performance of a 64 Mb Phase-change Random Access Memory”, Hyung-rok Oh, et al., IEEE International Solid-State Circuit Conference, 2005 (3 pgs.).
“A Nonvolatile Programmable Solid Electrolyte Nanometer Switch”, T. Sakamoto, et al., IEEE International Solid-State Circuits Conference, 2004 (10 pgs.).
“OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”, Stefan Lai, et al., Intel Corporation, (4 pgs.).
“An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption”, Y.H. Ha, et al., Symposium on VLSI Technology Digest of Technical Papers, 2003, (2 pgs.).
“A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, H. Horii, et al., Samsung Electronics., 2003 (2 pgs.).

Affiliated with

Also associated with

Rating

Circuit for programming a memory element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuit for programming a memory element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit for programming a memory element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4087049