Circuit for identifying a memory cell having erroneous data stor

Static information storage and retrieval – Read/write circuit – Bad bit

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Details

36518907, 36518908, 36518509, 36518533, G11C 700

Patent

active

056871244

ABSTRACT:
A circuit for selectively programming a single bit in non-volatile memory is disclosed. The circuit consists of at least one comparator, at least one transistor, and at least one logic gate for each elementary memory in the memory word. In operation, the circuit allows for individual correction of mis-programmed cells within the memory by comparing the actual contents of the memory with the desired contents. If the actual contents does not match the desired contents, that individual cell is re-programmed.

REFERENCES:
patent: 4475194 (1984-10-01), LaVallee et al.
patent: 5287326 (1994-02-01), Hirata

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