Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-06-29
2009-08-25
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S177000, C365S179000, C327S539000
Reexamination Certificate
active
07580299
ABSTRACT:
A circuit for generating a reference voltage in a memory device includes a switching section, a first voltage generator, a second voltage generator and a comparator. The switching section controls a supply of a power supply voltage in response to a control signal. The first voltage generator generates a reference voltage and a first voltage by dividing the power supply voltage provided through the switching section, and has a negative temperature coefficient characteristic. The second voltage generator generates the reference voltage and a second voltage having a positive temperature coefficient characteristic. The comparator compares the first voltage with the second voltage, and controls the switching section in accordance with the comparison result.
REFERENCES:
patent: 7205755 (2007-04-01), Ito et al.
patent: 2005/0185491 (2005-08-01), Kim et al.
patent: 2008/0042737 (2008-02-01), Kim et al.
patent: 100143344 (1998-04-01), None
patent: 1020020002509 (2002-01-01), None
patent: 1020020002951 (2002-01-01), None
patent: 1020040007124 (2004-01-01), None
Hynix / Semiconductor Inc.
Le Toan
Nguyen Tuan T
Townsend and Townsend / and Crew LLP
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