Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-07-11
2006-07-11
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189110
Reexamination Certificate
active
07075833
ABSTRACT:
The present invention discloses a circuit for detecting a negative word line voltage including a detecting unit for detecting a negative word line voltage in a detection node by using a plurality of loads coupled in series between a power supply terminal and a negative word line voltage terminal, a test signal generating unit for generating a plurality of test signals for detecting variations of the negative word line voltage, and a control unit driven according to the test signals, for controlling a potential of the detection node by adjusting a number of the loads of the detecting unit. The circuit for detecting the negative word line voltage can detect a wanted level of negative word line voltage by using the plurality of test signals without modifying the circuit, to reduce a development period of DRAM semiconductor products.
REFERENCES:
patent: 6496027 (2002-12-01), Sher et al.
patent: 6943402 (2005-09-01), Nagasaka et al.
Korean Office Action for Korean Patent Application No. 2003-89322 dated Sep. 29, 2005.
Kang Khil Ohk
Park Kee Teok
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Tran Anthan
Zarabian Amir
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