Circuit for applying selected voltages to dynamic random access

Static information storage and retrieval – Systems using particular element – Capacitors

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365201, G11C 700, G11C 1140

Patent

active

050797433

ABSTRACT:
A dynamic random access memory (DRAM) includes a selection circuit for selecting the voltages used for aging. The switching circuit operates responsive to external control signals. When a source voltage (Vcc) is selected, the voltage (Vcc) is supplied to one electrode of a memory cell via a circuit 73 and a transmission gate while a ground potential (Vss) is supplied to the other electrode via a bit line and a transistor. Conversely, when the ground potential (Vss) is selected, an inverted voltage is applied across the two electrodes. In this manner, the insulating properties of an insulator interposed between the two electrodes can be checked more reliably during aging.

REFERENCES:
patent: 4527254 (1985-06-01), Ryan et al.
patent: 4839865 (1989-06-01), Sato et al.
Y. Ohji et al, "Reliability of Nano-Meter Thick Multi-Layer Dielectric Films of Poly-Crystalline Silicon", Symposium of International Reliability Physics, 1987, IEEE, pp. 55-59.

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