Circuit for applying selected voltages to dynamic random access

Details Circuit for applying selected voltages to dynamic random access Circuit for applying selected voltages to dynamic random access

1989-11-15

1992-01-07

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Capacitors

365201, G11C 700, G11C 1140

Patent

active

050797433

ABSTRACT:
A dynamic random access memory (DRAM) includes a selection circuit for selecting the voltages used for aging. The switching circuit operates responsive to external control signals. When a source voltage (Vcc) is selected, the voltage (Vcc) is supplied to one electrode of a memory cell via a circuit 73 and a transmission gate while a ground potential (Vss) is supplied to the other electrode via a bit line and a transistor. Conversely, when the ground potential (Vss) is selected, an inverted voltage is applied across the two electrodes. In this manner, the insulating properties of an insulator interposed between the two electrodes can be checked more reliably during aging.

REFERENCES:
patent: 4527254 (1985-06-01), Ryan et al.
patent: 4839865 (1989-06-01), Sato et al.
Y. Ohji et al, "Reliability of Nano-Meter Thick Multi-Layer Dielectric Films of Poly-Crystalline Silicon", Symposium of International Reliability Physics, 1987, IEEE, pp. 55-59.

Affiliated with

Also associated with

Rating

Circuit for applying selected voltages to dynamic random access does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuit for applying selected voltages to dynamic random access , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit for applying selected voltages to dynamic random access will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-827125