Circuit for applying selected voltages to dynamic random access

Details Circuit for applying selected voltages to dynamic random access Circuit for applying selected voltages to dynamic random access

1993-03-17

1994-08-09

Dixon, Joseph L.

Static information storage and retrieval

Systems using particular element

Capacitors

36518903, 36518905, 365201, 36523008, G11C 1140, G11C 11407

Patent

active

053372727

ABSTRACT:
A dynamic random access memory (DRAM) includes a selection circuit for selecting the voltages used for aging. The selection circuit operates responsive to external control signals. When a source voltage (Vcc) is selected, the voltage (Vcc) is supplied to one electrode of a memory cell via a circuit 73 and a transmission gate while a ground potential (Vss) is supplied to the other electrode via a bit line and a transistor. Conversely, when the ground potential (Vss) is selected, an inverted voltage is applied across the two electrodes. In this manner, the insulating properties of an insulator interposed between the two electrodes can be checked more reliably during aging.

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"Reliability of Nano-Meter Thick Multi-Layer Dielectric Films of Poly-Crystalline Silicon", Y. Ohji et al., Symposium of International Reliability Physics, 1987, IEEE, pp. 55-59.

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