Circuit for applying a voltage to a memory cell MOS capacitor of

Details Circuit for applying a voltage to a memory cell MOS capacitor of Circuit for applying a voltage to a memory cell MOS capacitor of

1984-11-01

1988-02-16

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Testing

365149, G11C 700

Patent

active

047259850

ABSTRACT:
A voltage applying circuit is adapted to a semiconductor memory device comprising a plurality of memory cells which each include MOS memory capacitors one terminal of each being connected to a common point. The output terminal of the voltage applying circuit is connected to the common point of the MOS capacitor, and a low voltage for normal operation of the MOS capacitor and a screening voltage for distinguishing a memory device, which is higher than that voltage, are selectively applied to the common connection point.

REFERENCES:
patent: 4380803 (1983-04-01), Tuan
patent: 4418403 (1983-11-01), O'Toole et al.

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