Static information storage and retrieval – Read/write circuit – Testing
Patent
1996-04-18
1997-08-05
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Testing
36518511, 36518523, 36523003, 36523006, G11C 800
Patent
active
056549253
ABSTRACT:
A circuit for applying a stress voltage for use in a semiconductor memory device includes a first control circuit for selecting a first block to which a program voltage is applied and then sequentially selecting following blocks; and a second control circuit for selecting a word line to which a stress voltage is to be applied, whereby, in a stress mode for detecting a defective call, the stress voltage is applied to a word line connected to a memory transistor within a first selected memory block and thereafter to word lines in each of the sequentially selected memory blocks.
REFERENCES:
patent: 5075890 (1991-12-01), Itoh et al.
patent: 5487050 (1996-01-01), Kim et al.
patent: 5517456 (1996-05-01), Chishiki
Choi Young-joon
Koh Yong-Nam
Samsung Electronics
Yoo Do Hyun
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