Circuit for accessing word line of semiconductor device and...

Static information storage and retrieval – Read/write circuit – Signals

Reexamination Certificate

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C365S203000

Reexamination Certificate

active

10880175

ABSTRACT:
Provided is directed to a method of accessing a word line of a semiconductor memory device, including the steps of: generating a word line active signal and an address strobe signal according to an active condition; receiving and decoding an address according to the address strobe signal; performing an active operation by accessing a word line in response to the word line active signal and the decoded address; holding after performing to decode a new address by receiving it during the active operation and another active operation; generating a precharge signal when a precharging condition is satisfied during a read operation; and accessing a new word line after performing the precharging operation according to the precharge signal.

REFERENCES:
patent: 5255235 (1993-10-01), Miyatake
patent: 6754778 (2004-06-01), Sato
patent: 6947348 (2005-09-01), Kim et al.

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