Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-05-29
1993-12-21
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257365, H01L 2978, H01L 2701
Patent
active
052723690
ABSTRACT:
A circuit element which includes a source region of a first conductance type provided with a source terminal, an intermediate region of the first conductance type separated from the source region by a first volume, a first channel region portion of a second conductance type provided with a first gate terminal and occupying the first volume, a drain region of the first conductance type provided with a drain terminal and separated from the intermediate region by a second volume, a second channel region portion of the second conductance type provided with a second gate terminal conductively connected to the first gate terminal and occupying said second volume, and an oxide layer. The first channel region portion, the intermediate region, and the second channel region portion are deposited on one face of the oxide layer. The design of the circuit element reduces adverse consequences of the so-called Kink effect, to which other circuit elements have been subject.
REFERENCES:
patent: 3328601 (1967-06-01), Rosenbaum
patent: 3427514 (1969-02-01), Olmstead et al.
patent: 3436622 (1969-04-01), Warner
patent: 3658586 (1969-04-01), Wang
patent: 3872491 (1975-03-01), Hanson et al.
patent: 4635088 (1987-01-01), Eguchi
patent: 4748485 (1988-05-01), Vasudev
Colinge Jean P.
Gao Ming H.
Interuniversitair Micro-Elektronica Centrum vzw
Jackson Jerome
Monin D.
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