Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Reexamination Certificate
2005-12-06
2005-12-06
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
C257S117000, C257S118000, C257S466000, C257S496000, C257S618000, C257S619000, C257S620000, C257S626000, C257S647000
Reexamination Certificate
active
06972477
ABSTRACT:
To make thin a circuit device10in which are incorporated a plurality of types of circuit elements12that differ in thickness, first conductive patterns, onto which comparatively thin circuit elements12A are mounted, are formed thickly, and second conductive patterns11B, onto which comparatively thick second circuit elements12B are mounted, are formed thinly. Also, fine wiring parts may be formed using the thinly formed second conductive patterns12B. Thus even in the case where thick circuit elements are incorporated, by affixing such circuit elements onto the thinly formed second conductive patterns11B, the total thickness can be made thin. Thinning of circuit device10as a whole can thus be accomplished.
REFERENCES:
patent: 5306872 (1994-04-01), Kordus et al.
patent: 2003/0017645 (2003-01-01), Kabayashi et al.
patent: 2002-76246 (2002-03-01), None
Igarashi Yusuke
Sakamoto Noriaki
Sakano Jun
Takakusaki Nobuhisa
Fish & Richardson P.C.
Huynh Andy
Kanto Sanyo Semiconductors Co., Ltd.
Sanyo Electric Co,. Ltd.
LandOfFree
Circuit device with conductive patterns separated by... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuit device with conductive patterns separated by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit device with conductive patterns separated by... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3508753