Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2005-07-26
2005-07-26
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S686000, C257S685000, C257S777000, C257S684000, C257S796000, C257S712000, C257S713000, C257S691000, C257S698000
Reexamination Certificate
active
06921975
ABSTRACT:
A circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10). At least a portion of the conductive layer (10) may be used as a reference voltage plane (e.g. a ground plane). Additionally, a circuit device (115) may be placed on a conductive layer (100) such that an active surface of circuit device (115) is between conductive layer (100) and an opposite surface of circuit device (115). The conductive layer (100) has at least one opening (128) to expose the active surface of circuit device (115). The encapsulant (24, 126,326) may be electrically conductive or electrically non-conductive.
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Leal George R.
Mangrum Marc Alan
Prack Edward R.
Sawyer Brian D.
Wenzel Robert J.
Chiu Joanna G.
Freescale Semiconductor Inc.
Hill Susan C.
Williams Alexander Oscar
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