Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-02
2009-10-27
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C257SE51040
Reexamination Certificate
active
07608877
ABSTRACT:
In a circuit device having a field effect transistor and a capacitor, the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of a field effect transistor, the field effect transistor has a channel comprised of a first nano-wire, and the capacitor comprises a first electrode comprised of a second nano-wire having electroconductivity, a dielectric layer partly covering the peripheral face of the first electrode and a second electrode covering the peripheral face of the dielectric layer.
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patent: 6515325 (2003-02-01), Farnworth et al.
patent: 2004/0112964 (2004-06-01), Empedocles et al.
patent: 2005/0064185 (2005-03-01), Buretea et al.
patent: 2005/0276093 (2005-12-01), Graham et al.
patent: 2006/0244361 (2006-11-01), Kim et al.
patent: 2004-146520 (2004-05-01), None
X. Duan et al., High-performance thin-film transistors using semiconductor nanowires and nanoribbons, Nature, Sep. 18, 2003, 274—278, Vol. 425, Nature Publishing Group, England.
Ikeda Sotomitsu
Shioya Shunsuke
Canon Kabushiki Kaisha
Canon U.S.A. Inc. IP Division
Purvis Sue
Quinto Kevin
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