Circuit device having capacitor and field effect transistor,...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S532000, C257SE51040

Reexamination Certificate

active

07608877

ABSTRACT:
In a circuit device having a field effect transistor and a capacitor, the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of a field effect transistor, the field effect transistor has a channel comprised of a first nano-wire, and the capacitor comprises a first electrode comprised of a second nano-wire having electroconductivity, a dielectric layer partly covering the peripheral face of the first electrode and a second electrode covering the peripheral face of the dielectric layer.

REFERENCES:
patent: 6515325 (2003-02-01), Farnworth et al.
patent: 2004/0112964 (2004-06-01), Empedocles et al.
patent: 2005/0064185 (2005-03-01), Buretea et al.
patent: 2005/0276093 (2005-12-01), Graham et al.
patent: 2006/0244361 (2006-11-01), Kim et al.
patent: 2004-146520 (2004-05-01), None
X. Duan et al., High-performance thin-film transistors using semiconductor nanowires and nanoribbons, Nature, Sep. 18, 2003, 274—278, Vol. 425, Nature Publishing Group, England.

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