Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-04-26
2011-04-26
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S277000, C257S341000, C257S343000, C257SE21022
Reexamination Certificate
active
07932577
ABSTRACT:
In a particular embodiment, a method of forming a field effect transistor (FET) device having a reduced peak current density is disclosed. The method includes forming a field effect transistor (FET) device on a substrate. The FET device includes a drain terminal, a source terminal, a gate terminal, and a body terminal. The method further includes depositing a plurality of metal contacts along a width of a gate terminal of the FET device and forming a wire trace to contact each of the plurality of metal contacts to reduce a gate resistance along the width of the gate terminal.
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Moore William E.
Webb Richard Bruce
Diaz José R
Parker Kenneth A
Polansky & Associates, P.L.L.C.
Reed R. Michael
Silicon Laboratories Inc.
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