Circuit configuration having a field-effect transistor...

Details Circuit configuration having a field-effect transistor... Circuit configuration having a field-effect transistor...

2005-02-22

2005-02-22

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000

Reexamination Certificate

active

06858895

ABSTRACT:
A circuit configuration for the switch-on/off control of a DMOS power transistor has at least one first gate electrode and, separate from the latter, a second gate electrode, which are capacitively coupled to one another by a capacitance distributed over the field-effect transistor and which can be driven via separate external gate electrode terminals. The circuit configuration has two individual driver circuits and a generating circuit in order to feed a first drive signal to the first gate electrode and a second drive signal to the second gate electrode, the second drive signal being delayed with respect to the first drive signal.

REFERENCES:
patent: 5561393 (1996-10-01), Sakurai et al.
patent: 5585650 (1996-12-01), Kumagai
patent: 6566708 (2003-05-01), Grover et al.
patent: 195 28 998 (1996-02-01), None
patent: 100 38 177 (2002-02-01), None

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