Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2006-03-28
2006-03-28
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S109000, C257S687000, C257S698000, C257S777000, C257S778000
Reexamination Certificate
active
07018866
ABSTRACT:
A circuit component built-in module includes: a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate; a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate. In the circuit component built-in module, the semiconductor chip has a thickness of not less than 30 μm and not more than 100 μm, and has a non-wired surface ground, and the circuit component built-in module has a thickness in a range of not less than 80 μm and not more than 200 μm. With this configuration, the high-performance and compact-size circuit component built-in module in which circuit components are mounted at a high density is provided so as to be used suitably in various types of electronic information devices.
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Asahi Toshiyuki
Komatsu Shingo
Nakatani Seiichi
Ohtani Kazuo
Sugaya Yasuhiro
Coleman W. David
Hamre Schumann Mueller & Larson P.C.
Nguyen Khiem
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