Circuit arrangement for reading out and regenerating items of in

Details Circuit arrangement for reading out and regenerating items of in Circuit arrangement for reading out and regenerating items of in

1979-08-23

1981-09-15

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365222, G11C 700

Patent

active

042901200

ABSTRACT:
A circuit arrangement is disclosed for reading out and regenerating items of information stored in one-transistor storage elements. For read-out, storage elements addressed by the activation of a word line transfer an existing information charge into assigned bit lines, and wherein the bit lines influence inputs of assigned read-out/regenerating amplifiers. The storage density of semiconductor stores is increased by providing a circuit arrangement in which the disproportion in terms of area between technologically realizable storage matrices and the required amplifiers which is a by-product of the miniaturization of stores of the above mentioned type does not occur. A group of m bit lines are in each case combined to form groups and are consecutively connected via a multiplexer to a common read-out/regenerating amplifier.

REFERENCES:
patent: 4160275 (1979-07-01), Lee et al.
Heller et al., "High-Sensitivity Charge-Transfer Sense Amplifier", 1975 IEEE International Solid-State Cir. Conf., 2/13/75, pp. 112-113.
Hoffmann, "Continuously Charge-Coupled Random-Access Memory (CCC RAM)", 1976 IEEE International Solid-State Cir. Conf., 2/19/76, pp. 130-131.
Tasch et al., "The Charge-Coupled RAM Cell Concept," IEEE Trans. on Electron Devices, vol. Ed. 23, No. 2, Feb. 1976, pp. 126-131.
Karte, "Cache Memory," Elektronik, 1974, p. 12.

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