Circuit and method of operating a ferrolectric memory in a DRAM

Details Circuit and method of operating a ferrolectric memory in a DRAM Circuit and method of operating a ferrolectric memory in a DRAM

1995-09-11

1997-10-21

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365201, 365210, G11C 1122

Patent

active

056803443

ABSTRACT:
A static ferroelectric memory circuit is described which has an array of ferroelectric memory cells fabricated as single capacitors using a ferroelectric dielectric and arranged as a static random access memory (SRAM). Data can be stored in a non-volatile manner on the memory cells by controlling the voltage placed upon the plates of the cell. A method is described for operating the ferroelectric memory as a dynamic random access memory (DRAM). Test methods are described for testing the memory cells and identifying whether a defect is result of a ferroelectric material defect or a physical defect, such as a short, open or high leakage.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 5010518 (1991-04-01), Toda
patent: 5086412 (1992-02-01), Jaffe et al.
patent: 5218566 (1993-06-01), Papaliolios
patent: 5254482 (1993-10-01), Fisch
patent: 5297077 (1994-03-01), Imai et al.
patent: 5305273 (1994-04-01), Jinbo
patent: 5424975 (1995-06-01), Lowrey et al.
patent: 5432731 (1995-07-01), Kirsch et al.
patent: 5487029 (1996-01-01), Kuroda
Wayne Kinney et al., "Memory Applications of Integrated Ferroelectric Technology," Digest of Technical Papers, 266-267 (1994).
Reza Moazzami et al., "A Ferroelectric Dram Cell for High Density Nvrams," 1990 Symposium on VLSI Technology, 15-17 (1990).
Tatsumi Sumi et al., "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns," Digest of Technical Papers, 268-269 (1994).

Affiliated with

Also associated with

Rating

Circuit and method of operating a ferrolectric memory in a DRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuit and method of operating a ferrolectric memory in a DRAM , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit and method of operating a ferrolectric memory in a DRAM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1012275