Circuit and method of forming the circuit having subsurface...

Details Circuit and method of forming the circuit having subsurface... Circuit and method of forming the circuit having subsurface...

2005-01-18

2005-01-18

Niebling, John F. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S317000

Reexamination Certificate

active

06844585

ABSTRACT:
A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.

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