Circuit and method for writing a binary value to a memory cell

Details Circuit and method for writing a binary value to a memory cell Circuit and method for writing a binary value to a memory cell

2006-08-29

2006-08-29

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including specified plural element logic arrangement

C365S154000

Reexamination Certificate

active

07099203

ABSTRACT:
A circuit and a method for writing a binary value to a memory cell are provided. The circuit includes a first field-effect transistor having a first drain, a first drain, and a first gate operably coupled between the first drain and the first source. The first drain is operably coupled to a first memory cell. The first gate configured to receive a first data signal. The circuit further includes a second field-effect transistor having a second drain, a second source, and a second gate operably coupled between the second drain and the second source. The drain source is operably coupled to the first memory cell. The second gate is configured to receive a second data signal. The circuit further includes a first signal inverter having a first input terminal and a first output terminal. The first output terminal is operably coupled to both of the first and second sources. The first signal inverter is configured to output a first control signal on the first output terminal when the first input terminal receives a second control signal. When the first control signal has a second logic level and the first data signal has a first logic level and the second data signal has the second logic level, the first and second field-effect transistors induce the first memory cell to store a first binary value.

REFERENCES:
patent: 5504711 (1996-04-01), Lu
patent: 6046930 (2000-04-01), Ciraula et al.
patent: 6671201 (2003-12-01), Masuda
patent: 6674670 (2004-01-01), Jeung
patent: 2004/0130933 (2004-07-01), Kanehara et al.
patent: 2005/0024970 (2005-02-01), Shore

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