Circuit and method for temperature tracing of devices...

Details Circuit and method for temperature tracing of devices... Circuit and method for temperature tracing of devices...

2006-03-28

2006-03-28

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S164000, C365S174000

Reexamination Certificate

active

07020014

ABSTRACT:
A phase change memory includes a temperature sensor having a resistance variable with temperature with the same law as a phase-change storage element. The temperature sensor is formed by a resistor of chalcogenic material furnishing an electrical quantity that reproduces the relationship between the resistance of a phase change memory cell and temperature; the electrical quantity is processed so as to generate reference quantities as necessary for writing and reading the memory cells. The chalcogenic resistor has the same structure as a memory cell and is programmed with precision, preferably in the reset state.

REFERENCES:
patent: 6816404 (2004-11-01), Khouri et al.
patent: 2001/0009528 (2001-07-01), Cooper et al.
patent: 522523 (1976-09-01), None

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