Circuit and method for sensing memory cell having multiple thres

Details Circuit and method for sensing memory cell having multiple thres Circuit and method for sensing memory cell having multiple thres

1998-09-03

2000-05-30

Nelms, David

Static information storage and retrieval

Read/write circuit

Differential sensing

36518521, 365236, G11C 702

Patent

active

060698306

ABSTRACT:
A circuit and method for sensing a memory cell having a plurality of threshold voltages is provided that implements a low power and voltage sensing operation and reduces a multiple level memory cell size by reducing the size of the circuit. The circuit includes a switch for applying or blocking a current to/from a selected memory cell in accordance with a switching control signal inputted into a bit line coupled with the selected memory cell. A current comparison unit compares sizes of a current flowing on the bit line and one reference current to output a result of the comparison. A memory stores the result of the comparison performed by the current comparison unit, and a counter register circuit is provided that has a range corresponding to the number of multiple levels of the memory cell and counts a value that corresponds to stored data in the selected cell.

REFERENCES:
patent: 5163021 (1992-11-01), Mehrptra et al.
patent: 5258669 (1993-11-01), Nakashima
patent: 5422842 (1995-06-01), Cernea et al.
patent: 5508958 (1996-04-01), Fazio et al.

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