Static information storage and retrieval – Powering
Reexamination Certificate
2005-05-10
2005-05-10
Elms, Richard (Department: 2824)
Static information storage and retrieval
Powering
C365S227000, C365S189090
Reexamination Certificate
active
06891771
ABSTRACT:
A technique for selecting a desired operational voltage mode in a semiconductor memory device by applying an external command signal is disclosed. The technique enables an internal voltage mode to be selected in response to an internal voltage mode selection that is programmable even after the completion of the package process for a semiconductor memory device. In one embodiment, the operational voltage mode selection circuit of a semiconductor memory device includes a first selection signal generating part that allows programmable selection of, or override of, a first operational voltage mode; a second selection signal generating part that allows programmable selection of, or override of, a second operational voltage mode; and an operational voltage mode determining part for decoding the output of the first and second voltage selection signal generating parts, along with programmable input selection signals, output an operational voltage mode determining signal.
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Elms Richard
Marger & Johnson & McCollom, P.C.
Nguyen Dang T
Samsung Electronics Co,. Ltd.
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