Circuit and method for reading a memory cell

Details Circuit and method for reading a memory cell Circuit and method for reading a memory cell

1998-05-29

1999-11-30

Hoang, Huan

Static information storage and retrieval

Read/write circuit

Including signal comparison

365210, 3651852, 36518521, 365205, G11C 700, G11C 1606

Patent

active

059954213

ABSTRACT:
A read circuit reads data stored in a memory cell that is coupled to a bit line. The read circuit includes a comparison circuit, such as a sense amplifier, having a first input terminal coupled to the bit line and having a second input terminal and a data output terminal. A switch is coupled between the bit line and the second input terminal of the comparison circuit and includes a control terminal that is coupled to receive a control signal.

REFERENCES:
patent: 3969706 (1976-07-01), Proebsting et al.
patent: 5594691 (1997-01-01), Bashir
patent: 5729492 (1998-03-01), Campardo

Affiliated with

Also associated with

Rating

Circuit and method for reading a memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuit and method for reading a memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit and method for reading a memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1681789