Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2008-10-27
2011-11-01
Salce, Patrick (Department: 2836)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257S355000, C257S328000, C257S110000, C257S356000, C361S056000, C361S091100, C361S111000
Reexamination Certificate
active
08049250
ABSTRACT:
Circuit and method for RC power clamp triggered dual SCR ESD protection. In an integrated circuit, a protected pad is coupled to an upper SCR circuit and a lower SCR circuit; and both are coupled to the RC power clamp circuit, which is coupled between the positive voltage supply and the ground voltage supply. A structure for ESD protection is disclosed having a first well of a first conductivity type adjacent to a second well of a second conductivity type, the boundary forming a p-n junction, and a pad contact diffusion region in each well electrically coupled to a pad terminal; additional diffusions are provided proximate to and electrically isolated from the pad contact diffusion regions, the diffusion regions and first and second wells form two SCR devices. These SCR devices are triggered, during an ESD event, by current injected into the respective wells by an RC power clamp circuit.
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Lee Jam-Wem
Song Ming-Hsiang
Salce Patrick
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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