Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-08-07
2007-08-07
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S205000, C365S210130, C365S190000, C365S196000, C365S185200, C365S185210
Reexamination Certificate
active
11421905
ABSTRACT:
A circuit and method for sensing a difference between a first signal, such as a signal from the source side of a memory cell, and a second signal, such as a signal from a reference dummy cell, includes developing first and second voltages respectively in response to the first and second signals, determining the time at which the second voltage developed in response to the second signal reaches a threshold level above a latch switching point, and latching a state of the first voltage and second voltage at the determined time using a latch circuit. The threshold level above the latch switching point is set so that potential mismatch in the components of the latch circuit is overcome prior to latching.
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Huang Shou Wei
Hung Chun-Hsiung
Lo Su-Chueh
Haynes Beffel & Wolfeld LLP
Hur J. H.
Macronix International Co. Ltd.
Suzue Kenta
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