Circuit and method for generating pumping voltage in...

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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C365S226000

Reexamination Certificate

active

08036047

ABSTRACT:
A circuit for generating a pumping voltage in a semiconductor memory apparatus includes a control signal generation block configured to generate a first control signal obtained by level-shifting a voltage level of a test signal to a first driving voltage level, a voltage application section configured to supply an external voltage to a first node in response to a first transmission signal, a first charge pump configured to raise a voltage level of the first node by a first predetermined level in response to an oscillator signal, and a first pumping voltage output section configured to select at least one of a first connection unit and a second connection unit in response to the first control signal, and to interconnect the first node with a second node using the selected connection unit when a second transmission signal is enabled, wherein a first pumping voltage is output through the second node.

REFERENCES:
patent: 5815446 (1998-09-01), Tobita
patent: 6333873 (2001-12-01), Kumanoya et al.
patent: 6608782 (2003-08-01), Hirano
patent: 6654296 (2003-11-01), Jang et al.
patent: 6853567 (2005-02-01), Kwon
patent: 2004/0208026 (2004-10-01), Kwon
patent: 11026697 (1999-01-01), None
patent: 1020010039045 (2001-05-01), None
patent: 1020070038676 (2007-04-01), None

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