Static information storage and retrieval – Read/write circuit – Data transfer circuit
Reexamination Certificate
2011-06-21
2011-06-21
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data transfer circuit
C365S189011, C365S205000, C365S230030
Reexamination Certificate
active
07965566
ABSTRACT:
The present invention relates to a semiconductor memory device, and more particularly, to a circuit and method for controlling local data lines, which can reduce loading on local data lines LIO. The circuit and method for controlling local data lines in accordance with the present invention is characterized by having different line loading of local data lines depending on positions of cell mats. In addition, local data lines between arrays are connected by a switch. Accordingly, the switch is turned on/off by address information about cell mat arrays, thereby preventing unnecessary line loading of local data lines to completely remove unnecessary loading. Moreover, the present invention reduces line loading, thereby improving data processing speed.
REFERENCES:
patent: 5598341 (1997-01-01), Ling et al.
patent: 6906972 (2005-06-01), Proell et al.
patent: 6956780 (2005-10-01), Kyung
patent: 10-107097 (1998-04-01), None
patent: 2001-101896 (2001-04-01), None
patent: 1020050106858 (2005-11-01), None
patent: 1020060025776 (2006-03-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Aug. 24, 2009 with an English Translation.
Hynix / Semiconductor Inc.
IP & T Group LLP
Lam David
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