Circuit and a method of determining the resistive state of a...

Details Circuit and a method of determining the resistive state of a... Circuit and a method of determining the resistive state of a...

2006-04-19

2009-02-24

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S189070, C365S148000, C365S185210

Reexamination Certificate

active

07495971

ABSTRACT:
A method and a circuit are disclosed for determining the resistive state of a resistive memory cell being read. The method includes determining the resistive state of the memory cell being read by comparing a current dependent on the resistive state of the memory cell being read with a reference current that can be dependent on a resistive state of at least one reference resistive memory cell. A read circuit can be constructed to compare the two currents. The resistive state of the memory cell being read is indicative of the data bit stored by the memory cell.

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Kozicki, M.N., et al., “Non-Vollatile Memory Based on Solid Electrolytes,” Center for Solid State Electronics Research, Arizona State University, 2004, 8 pages.

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