Chromeless phase shifting mask for integrated circuits using...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

07493587

ABSTRACT:
A system for creating mask layout pattern data in order to create a number of desired features on a semiconductor wafer. Critical features and features that are adjacent to or abut critical features are formed as phase shifting regions on a mask. Larger, non-critical features can be formed as annular rim shifters and may include one or more filling phase shifting regions. Non-critical features that are not adjacent to critical features and/or sub-resolution features that are not desired to print on the wafer can be formed as opaque or partially transparent regions on the mask.

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