Choosing read/write current polarities to reduce errors in a...

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S158000

Reexamination Certificate

active

11220132

ABSTRACT:
A memory is composed o a storage element10having a magnetization fixed layer3provided relative to a storage layer5through an intermediate layer4in which the direction of magnetization of the storage layer5is changed with application of an electric current to the storage element10in the lamination layer direction to record information on the storage layer5and a wiring through which an electric current flows to the lamination layer direction of the storage element10, wherein when information is read out from the storage layer5, an electric current of the same polarity as that of an electric current to record information in such a manner that an electric resistance of the storage element10is changed from the high resistance state to the low resistance state flows through the wiring to the storage element10.

REFERENCES:
patent: 6714390 (2004-03-01), Terada et al.
patent: 6828785 (2004-12-01), Hosomi et al.

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