Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-12-18
2007-12-18
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21575, C257S298000, C257S300000, C257S528000, C365S185010
Reexamination Certificate
active
11123936
ABSTRACT:
A chip or wafer comprises a semiconductor substrate, first and second transistors on the semiconductor substrate, first and second metal layers over the semiconductor substrate, an insulating layer on the first and second metal layers, a third and fourth metal layers on the insulating layer, a passivation layer over the third and fourth metal layers, and a fifth metal layer over the passivation layer. A signal is suited to be transmitted from the first transistor to the second transistor sequentially through the first, third, fifth, fourth and second metal layers.
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Huang Ching-Cheng
Lee Jin-Yuan
Lin Mou-Shiung
Chu Chris C.
Hsu Winston
Jackson Jerome
MEGICA Corporation
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