Chip structure and process for forming the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257SE21575, C257S298000, C257S300000, C257S528000, C365S185010

Reexamination Certificate

active

11123936

ABSTRACT:
A chip or wafer comprises a semiconductor substrate, first and second transistors on the semiconductor substrate, first and second metal layers over the semiconductor substrate, an insulating layer on the first and second metal layers, a third and fourth metal layers on the insulating layer, a passivation layer over the third and fourth metal layers, and a fifth metal layer over the passivation layer. A signal is suited to be transmitted from the first transistor to the second transistor sequentially through the first, third, fifth, fourth and second metal layers.

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