Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2006-05-23
2006-05-23
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S690000, C257S774000, C257S776000, C257S798000, C257S303000, C257S784000, C228S180220, C174S261000, C438S612000
Reexamination Certificate
active
07049705
ABSTRACT:
A chip structure can reduce the phenomenon of overcrowding current at the conventional circular opening of the passivation layer and further causing electromigration when the current flows to the bonding pad via the transmission line. The improved structure for the side profile of the opening of the passivation layer is about a circular profile, but the portion near to the transmission line is a straight line or a curving line. When the current flows through this opening, the current density can be uniformly distributed along the straight line or the curving line, and whereby the phenomenon of overcrowding current can be reduced.
REFERENCES:
patent: 5875102 (1999-02-01), Barrow
patent: 6417575 (2002-07-01), Harada et al.
patent: 6583506 (2003-06-01), Yano et al.
patent: 55138872 (1980-10-01), None
patent: 57045938 (1982-03-01), None
patent: 11219954 (1999-08-01), None
ADVANCED Semiconductor Engineering, Inc.
Chu Chris C.
Jiang Chyun IP Office
Thomas Tom
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