Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-06-21
2011-06-21
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S685000, C257S777000, C257SE25006, C257SE25013, C257S025000, C257SE25021, C257SE25027, C438S109000
Reexamination Certificate
active
07964948
ABSTRACT:
A chip stack may include a first chip and a second chip stacked on the first chip. Each of the first and second chips may include a substrate having an active surface and an inactive surface opposite to the active surface; an internal circuit in the active surface; an I/O chip pad on the active surface and connected to the internal circuit through an I/O buffer; and a I/O connection pad connected to the I/O chip pad through the I/O buffer by a circuit wiring. A redistributed I/O chip pad layer may be on the active surface of the first chip, the redistributed I/O chip pad layer redistributing the I/O chip pad. The I/O connection pads of the first chip and the second chip may be electrically connected to each other by an electrical connecting part.
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Kang Sun-Won
Lee Jong-joo
Gupta Raj
Harness & Dickey & Pierce P.L.C.
Pizarro Marcos D
Samsung Electronics Co,. Ltd.
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