Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2006-03-07
2006-03-07
Graybill, David E. (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S109000, C438S118000, C438S119000, C438S122000, C438S123000, C438S124000, C438S126000, C438S613000, C438S928000
Reexamination Certificate
active
07008820
ABSTRACT:
A method for manufacturing an integrated circuit package comprises forming a substrate by forming a core layer with a through opening and vias. A first conductive layer is formed on the core layer covering the through opening and a second conductive layer is formed on the core layer opposite the first conductive layer in the through opening and in the vias contacting the first conductive layer. An integrated circuit die is bonded to the second conductive layer and in the through opening. Connections are formed between the integrated circuit die and the second conductive layer, and the integrated circuit die and the connections are encapsulated.
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Filoteo, Jr. Dario S.
Li Jian Jun
Shim Il Kwon
Tan Kwee Lan
Graybill David E.
Ishimaru Mikio
ST Assembly Test Services Ltd.
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