Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2009-12-03
2011-10-18
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S668000, C257S676000, C257S692000, C257SE23031, C257SE23032, C257SE23039, C257SE23153, C361S813000, C438S123000
Reexamination Certificate
active
08039946
ABSTRACT:
A chip package structure including a chip, a lead frame, first bonding wires and second bonding wires is provided. The chip has an active surface and chip bonding pads disposed thereon. The lead frame is fixed on the chip and the lead frame includes inner leads, at least one bus bar, an insulating layer and transfer bonding pads. The bus bar is located between the chip bonding pads and the inner leads. The insulating layer is disposed on the bus bar and the transfer bonding pads are disposed thereon. The inner leads and the bus bar are located above the active surface. The chip and the insulating layer are located respectively on two opposite surfaces of the bus bar. The first bonding wires respectively connect the chip bonding pads and the transfer bonding pads. The second bonding wires respectively connect the transfer bonding pads and the inner leads.
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patent: 2003/0042583 (2003-03-01), Chen et al.
Chiou Jie-Hung
Huang Chih-Lung
Pan Hua
ChipMOS Technologies (Bermuda) Ltd.
ChipMOS Technologies (Shanghai) Ltd.
Gumedzoe Peniel M
J.C. Patents
Lee Eugene
LandOfFree
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