Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2008-05-20
2008-05-20
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S787000, C257S790000, C257S778000, C257S777000, C257SE23127
Reexamination Certificate
active
10906536
ABSTRACT:
A chip package structure comprising a substrate, a chip, a plurality of bumps, some buffer material and some encapsulation is provided. The substrate has a first surface and a corresponding second surface. The chip has an active surface and a back surface. The bumps are disposed between the active surface of the chip and the first surface of the substrate. The buffer material is disposed on the back surface of the chip. The encapsulation is disposed over the first surface of the substrate to enclose the chip and the buffer material.
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Chung Chih-Ming
Wang Meng-Jen
Advanced Semiconductor Engineering Inc.
Parekh Nitin
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