Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2007-08-28
2007-08-28
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257SE23069, C257SE23021, C257SE23068, C257SE23101, C257SE25012, C257S737000, C257S738000, C257S787000, C257S788000, C257S789000, C257S790000, C257S791000
Reexamination Certificate
active
11160924
ABSTRACT:
A process for fabricating a chip package structure with the following steps is provided. First, a chip having an active surface is provided. A plurality of solder bumps is disposed on the active surface. Then, a polymer material including flux is placed on the surface of the solder bumps by a dipping process. The chip is disposed on a carrier such that the carrier is in contact with the solder bumps. A reflow process is carried out so that the chip and the carrier are electrically connected through the solder bumps and a plurality of supporting structures made from the polymer material are formed around the junctions between the solder bumps and the carrier. The supporting structures enhance the endurance of the solder bumps to thermal stress and reduce damage due to fatigue.
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Advanced Semiconductor Engineering Inc.
Jianq Chyun IP Office
Williams Alexander Oscar
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