Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-11-02
1993-11-30
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257379, 257532, 257596, H01L 2702
Patent
active
052668215
ABSTRACT:
An extensive network of N-channel transistor formed capacitor, with one node tie directly to V.sub.cc power bus and the other node directly V.sub.ss power bus, is implemented throughout all open space available on the whole silicon chip (memory as well as logic chip), particularly those directly underneath the metal power bus to achieve an on-chip power bus decoupling capacitor with capacitance in excess of 0.001 .mu.F.
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Chern Wen-Foo
Duesman Kevin G.
Parkinson Ward D.
Trent Thomas M.
Carroll J.
Micro)n Technology, Inc.
Protigal Stanley N.
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