Chip contacts without oxide discontinuities

Details Chip contacts without oxide discontinuities Chip contacts without oxide discontinuities

1987-08-20

1989-06-13

James, Andrew J.

357 67, H01L 2348

Patent

active

048397156

ABSTRACT:
An integrated circuit chip including a first and a higher second surface levels with an abrupt sidewall step transition therebetween, and having a first layer of a first conductive material disposed over the first surface level and over the second surface level, but terminating on the first surface level in a first end portion which extends up to but does not touch the sidewall. This end portion comprises a conductive material which has been converted to an insulator. A second layer of a second conductive material is disposed on top of the first conductive layer with essentially no conductive material conversion to insulator therein adjacent to the abrupt sidewall transition. In a preferred embodiment, the conductive material is an alloy of aluminum and the end portion is aluminum oxide.

REFERENCES:
patent: 4028206 (1977-07-01), King
patent: 4154874 (1979-05-01), Howard et al.
patent: 4214018 (1980-07-01), Halon et al.
patent: 4307132 (1981-12-01), Chu et al.
patent: 4460618 (1984-07-01), Heinecke et al.
patent: 4525221 (1985-06-01), Wu

Affiliated with

Also associated with

Rating

Chip contacts without oxide discontinuities does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chip contacts without oxide discontinuities, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chip contacts without oxide discontinuities will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1281300